HUAYI · FETs & Power MOSFETs · MPN HYG090P03LA1C1
No reviews yet — be the first to review HUAYI HYG090P03LA1C1.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 60nC |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 267pF |
| RDS(on) | 14mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.992nF |
| Type | P-Channel |
P-Channel 30V 40A 25W Surface Mount DFN-8(3x3)