HUAYI · FETs & Power MOSFETs · MPN HYG082N03LR1C1
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| Gate Charge(Qg) | 14.8nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 108pF |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 21.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 13.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 787pF |
| Type | N-Channel |
N-Channel 30V 32A 21.4W Surface Mount DFN3x3-8L