HUAYI · FETs & Power MOSFETs · MPN HYG080ND03LA1S
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| Gate Charge(Qg) | 14.6nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 16mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 680pF |
| Type | N-Channel |
N-Channel Array 30V 11A 2.5W Surface Mount SOP-8