HUAYI · FETs & Power MOSFETs · MPN HYG080N10LS1P
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| Drain to Source Voltage | 100V |
|---|---|
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 150W |
| RDS(on) | 11.2mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 43pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.09nF |
100V 90A 1V 150W 11.2mΩ@4.5V 1 N-channel TO-220FB-3L Single FETs, MOSFETs RoHS