HUAYI · FETs & Power MOSFETs · MPN HYG080N10LS1D
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| Gate Charge(Qg) | 34.2nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 766pF |
| Current - Continuous Drain(Id) | 62A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 72W |
| Reverse Transfer Capacitance (Crss@Vds) | 62pF |
| RDS(on) | 13.3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.108nF |
| Type | N-Channel |
N-Channel 100V 62A 72W Surface Mount TO-252-2L