HUAYI · FETs & Power MOSFETs · MPN HYG080N10LS1C2
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 30.2nC@10V |
| Output Capacitance(Coss) | 755pF |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 71W |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF |
| RDS(on) | 13mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.07nF |
| Type | N-Channel |
N-Channel 100V 65A 71W Surface Mount PDFN5x6-8L