HUAYI · FETs & Power MOSFETs · MPN HYG072N10LS1P
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| Gate Charge(Qg) | 54.3nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 6.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.07nF |
N-Channel 100V 80A 104W Through Hole TO-220FB-3L