HUAYI · FETs & Power MOSFETs · MPN HYG072N08NR1P
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| Gate Charge(Qg) | 68nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 365pF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 188W |
| Reverse Transfer Capacitance (Crss@Vds) | 164pF |
| RDS(on) | 7.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.77nF |
| Type | N-Channel |
80V 100A 4V 188W 7.9mΩ@10V 1 N-channel N-Channel TO-220FB-3L Single FETs, MOSFETs RoHS