HUAYI · FETs & Power MOSFETs · MPN HYG068N08NR1P
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| Gate Charge(Qg) | 84nC |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 268W |
| Reverse Transfer Capacitance (Crss@Vds) | 231pF |
| RDS(on) | 7.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.722nF |
| Type | N-Channel |
N-Channel 80V 160A 268W Through Hole TO-220FB-3