HUAYI · FETs & Power MOSFETs · MPN HYG067N07NQ1P
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| Gate Charge(Qg) | 114.8nC |
|---|---|
| Drain to Source Voltage | 68V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 139.3pF |
| RDS(on) | 6.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.1931nF |
N-Channel 68V 80A 136W Through Hole TO-220FB-3L