HUAYI · FETs & Power MOSFETs · MPN HYG067N07NQ1D
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| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 68V |
| Output Capacitance(Coss) | 233pF |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 86W |
| Reverse Transfer Capacitance (Crss@Vds) | 139pF |
| RDS(on) | 8.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.089nF |
| Type | N-Channel |
N-Channel 68V 70A 86W Surface Mount TO-252-2L