HUAYI · FETs & Power MOSFETs · MPN HYG065P03LQ1D
No reviews yet — be the first to review HUAYI HYG065P03LQ1D.
| Gate Charge(Qg) | 76nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 531pF |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 57.7W |
| RDS(on) | 14mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 446pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.595nF |
| Type | P-Channel |
P-Channel 30V 70A 57.7W Surface Mount TO-252-2L