HUAYI · FETs & Power MOSFETs · MPN HYG065P03LQ1C2
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| Gate Charge(Qg) | 86nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 531pF |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 57.7W |
| RDS(on) | 5.9mΩ@10V;9.1mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 142pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.598nF |
| Type | P-Channel |
P-Channel 30V 70A 57.7W Surface Mount PPAK-8L(5x6)