HUAYI · FETs & Power MOSFETs · MPN HYG065N07NS1P
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| Gate Charge(Qg) | 52nC@10V |
|---|---|
| Drain to Source Voltage | 70V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 6.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.99nF |
| Type | N-Channel |
N-Channel 70V 100A 125W Through Hole TO-220FB-3