HUAYI · FETs & Power MOSFETs · MPN HYG065N07NS1C2
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| Drain to Source Voltage | 70V |
|---|---|
| Gate Charge(Qg) | 52nC@10V |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 57.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| RDS(on) | 5.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.07nF |
N-Channel 70V 70A 57.7W Surface Mount PDFN-8(5x6)