HUAYI · FETs & Power MOSFETs · MPN HYG065N03LR1C2
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 17.6nC@10V |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 42W |
| RDS(on) | 8.6mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 89pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 732pF |
N-Channel 30V 55A 42W Surface Mount PDFN-8(5x6)