HUAYI · FETs & Power MOSFETs · MPN HYG064N08NA1P
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| Gate Charge(Qg) | 65nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 205pF |
| RDS(on) | 6.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.08nF |
N-Channel 80V 120A 208W Through Hole TO-220FB-3L