HUAYI · FETs & Power MOSFETs · MPN HYG060P04LQ1D
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| Gate Charge(Qg) | 128nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 431pF |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 65W |
| Reverse Transfer Capacitance (Crss@Vds) | 403pF |
| RDS(on) | 10.5mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6.774nF |
| Type | P-Channel |
40V 70A 3V 65W 10.5mΩ@4.5V 1 P-Channel P-Channel TO-252-2 Single FETs, MOSFETs RoHS