HUAYI · FETs & Power MOSFETs · MPN HYG060N15NS1P
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| Drain to Source Voltage | 150V |
|---|---|
| Current - Continuous Drain(Id) | 175A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 375W |
| RDS(on) | 5.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 79.6pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.352nF |
150V 175A 2V 375W 5.5mΩ@10V 1 N-channel TO-220FB-3L Single FETs, MOSFETs RoHS