HUAYI · FETs & Power MOSFETs · MPN HYG060N08NS1D
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| Gate Charge(Qg) | 48nC |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 1.15nF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 6.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.96nF |
| Type | N-Channel |
N-Channel 80V 80A 75W Surface Mount TO-252-2L