HUAYI · FETs & Power MOSFETs · MPN HYG060N08NS1B
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 48nC@10V |
| Current - Continuous Drain(Id) | 105A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.95nF |
| Type | N-Channel |
80V 105A 4V 125W 6mΩ@10V 1 N-channel N-Channel TO-263-2 Single FETs, MOSFETs RoHS