HUAYI · FETs & Power MOSFETs · MPN HYG055N10NS1P
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| Gate Charge(Qg) | 82nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 130A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 187.5W |
| RDS(on) | 4.3mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 165pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.148nF |
100V 130A 2V 187.5W 4.3mΩ@10V 1 N-channel TO-220FB-3L Single FETs, MOSFETs RoHS