HUAYI · FETs & Power MOSFETs · MPN HYG055N08NS1C2
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 60nC@10V |
| Output Capacitance(Coss) | 1.54nF |
| Current - Continuous Drain(Id) | 85A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 83.3W |
| RDS(on) | 6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.66nF |
| Type | N-Channel |
N-Channel 80V 85A 83.3W Surface Mount DFN-8(5.2x5.9)