HUAYI · FETs & Power MOSFETs · MPN HYG055N08NS1B
No reviews yet — be the first to review HUAYI HYG055N08NS1B.
| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 1.54nF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 187.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 6.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.66nF |
| Type | N-Channel |
N-Channel 80V 120A 187.5W Surface Mount TO-263-2L