HUAYI · FETs & Power MOSFETs · MPN HYG054N09NS1B
No reviews yet — be the first to review HUAYI HYG054N09NS1B.
| Gate Charge(Qg) | 88.5nC@10V |
|---|---|
| Drain to Source Voltage | 85V |
| Output Capacitance(Coss) | 669pF |
| Current - Continuous Drain(Id) | 135A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 187.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 59pF |
| RDS(on) | 5.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.067nF |
| Type | N-Channel |
N-Channel 85V 135A 187.5W Surface Mount TO-263-2L