HUAYI · FETs & Power MOSFETs · MPN HYG053N10NS1C2
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| Gate Charge(Qg) | 73nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.342nF |
| Current - Continuous Drain(Id) | 95A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 83.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 153pF |
| RDS(on) | 5.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.744nF |
| Type | N-Channel |
N-Channel 100V 95A 83.3W Surface Mount PDFN5x6-8L