HUAYI · FETs & Power MOSFETs · MPN HYG053N10NS1B
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| Gate Charge(Qg) | 70nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 187.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF |
| RDS(on) | 5.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.036nF |
| Type | N-Channel |
N-Channel 100V 120A 187.5W Surface Mount TO-263-2L