HUAYI · FETs & Power MOSFETs · MPN HYG050N13NS1P
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| Drain to Source Voltage | 135V |
|---|---|
| Gate Charge(Qg) | 165nC@10V |
| Output Capacitance(Coss) | 905pF |
| Current - Continuous Drain(Id) | 200A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 176pF |
| RDS(on) | 4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.687nF |
| Type | N-Channel |
135V 200A 3V 375W 4mΩ@10V 1 N-channel N-Channel TO-220FB-3L Single FETs, MOSFETs RoHS