HUAYI · FETs & Power MOSFETs · MPN HYG050N13NS1B6
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| Gate Charge(Qg) | 165nC@10V |
|---|---|
| Drain to Source Voltage | 135V |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 181pF |
| RDS(on) | 5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.662nF |
| Type | N-Channel |
N-Channel 135V 200A 375W Surface Mount TO-263-6