HUAYI · FETs & Power MOSFETs · MPN HYG050N13NS1B
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| Gate Charge(Qg) | 165nC@10V |
|---|---|
| Drain to Source Voltage | 135V |
| Output Capacitance(Coss) | 905pF |
| Current - Continuous Drain(Id) | 200A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 176pF |
| RDS(on) | 5mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 11.687nF |
| Type | N-Channel |
135V 200A 4V 375W 5mΩ@10V N-Channel TO-263-2 Single FETs, MOSFETs RoHS