HUAYI · FETs & Power MOSFETs · MPN HYG050N10NS1P
No reviews yet — be the first to review HUAYI HYG050N10NS1P.
| Gate Charge(Qg) | 100nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 716pF |
| Current - Continuous Drain(Id) | 135A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 189.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 77pF |
| RDS(on) | 5.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.359nF |
| Type | N-Channel |
100V 135A 4V 189.8W 5.2mΩ@10V 1 N-channel N-Channel TO-220FB-3L Single FETs, MOSFETs RoHS