HUAYI · FETs & Power MOSFETs · MPN HYG050N08NS1B
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| Gate Charge(Qg) | 68nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 130A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 187.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.28nF |
| Type | N-Channel |
80V 130A 4V 187.5W 5mΩ@10V 1 N-channel N-Channel TO-263-2 Single FETs, MOSFETs RoHS