HUAYI · FETs & Power MOSFETs · MPN HYG045P06LA1B
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| Gate Charge(Qg) | 319nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 890pF |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 444pF |
| RDS(on) | 6mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 16.993nF |
| Type | P-Channel |
60V 160A 2.5V 250W 6mΩ@4.5V 1 P-Channel P-Channel TO-263-2 Single FETs, MOSFETs RoHS