HUAYI · FETs & Power MOSFETs · MPN HYG045P03LQ1D
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| Gate Charge(Qg) | 135.5nC |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 649pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 60W |
| RDS(on) | 4.4mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 575pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 7.66nF |
| Vgs | ±20V |
P-Channel 30V 60A 60W Surface Mount TO-252-2L