HUAYI · FETs & Power MOSFETs · MPN HYG045P03LQ1C2
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| Gate Charge(Qg) | 131.3nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 649pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 62.5W |
| RDS(on) | 6.2mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 575pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 7.66nF |
| Type | P-Channel |
P-Channel 30V 80A 62.5W Surface Mount PPAK-8(5x6)