HUAYI · FETs & Power MOSFETs · MPN HYG045N04LA1D
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| Gate Charge(Qg) | 98.6nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 77A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 65.2W |
| RDS(on) | 5.2mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 295pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.916nF |
40V 77A 1.6V 65.2W 5.2mΩ@4.5V 1 N-channel TO-252-2L Single FETs, MOSFETs RoHS