HUAYI · FETs & Power MOSFETs · MPN HYG045N03LA1C1
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| Gate Charge(Qg) | 46.2nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 23W |
| Reverse Transfer Capacitance (Crss@Vds) | 228pF |
| RDS(on) | 6.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.106nF |
| Type | N-Channel |
N-Channel 30V 50A 23W Surface Mount PDFN-8(3.1x3.1)