HUAYI · FETs & Power MOSFETs · MPN HYG043N10NS2B
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 100nC@10V |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 164A |
| Output Capacitance(Coss) | 2.234nF |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 258.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 196pF |
| RDS(on) | 4.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.236nF |
N-Channel 100V 164A 258.6W Surface Mount TO-263-2L