HUAYI · FETs & Power MOSFETs · MPN HYG042N10NS1B
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| Gate Charge(Qg) | 119nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 2.506nF |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF |
| RDS(on) | 4.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.04nF |
| Type | N-Channel |
N-Channel 100V 160A 200W Surface Mount TO-263-2L