HUAYI · FETs & Power MOSFETs · MPN HYG040N04LS1C1
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| Gate Charge(Qg) | 17.5nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 75A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 55.5W |
| RDS(on) | 6.7mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.18nF |
N-Channel 40V 75A 55.5W Surface Mount PDFN-8L(3.3x3.3)