HUAYI · FETs & Power MOSFETs · MPN HYG038N03LR1C2
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 35.5nC@10V |
| Current - Continuous Drain(Id) | 84A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 53W |
| RDS(on) | 3.3mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 176pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.486nF |
N-Channel 30V 84A 53W Surface Mount PDFN-8(5x6)