HUAYI · FETs & Power MOSFETs · MPN HYG037N10LS2C2
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| Gate Charge(Qg) | 94nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 2.1nF |
| Current - Continuous Drain(Id) | 105A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 75W |
| RDS(on) | 5mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 206pF |
| Input Capacitance(Ciss) | 4.516nF |
| Type | N-Channel |
100V 105A 2.5V 75W 5mΩ@4.5V N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS