HUAYI · FETs & Power MOSFETs · MPN HYG037N04LR1D
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 60nC@10V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 3.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.27nF |
N-Channel 40V 80A 62.5W Surface Mount TO-252-2L