HUAYI HYG035N08NS2P

HUAYI · FETs & Power MOSFETs · MPN HYG035N08NS2P

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Specifications

Gate Charge(Qg)75nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)1.87nF
Current - Continuous Drain(Id)135A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)170pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.63nF
TypeN-Channel

Technical details

N-Channel 80V 135A 150W Through Hole TO-220FB-3L

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