HUAYI · FETs & Power MOSFETs · MPN HYG035N04LR1D
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| Gate Charge(Qg) | 107.1nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 61W |
| Reverse Transfer Capacitance (Crss@Vds) | 207pF |
| RDS(on) | 5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.905nF |
| Type | N-Channel |
N-Channel 40V 6A 61W Surface Mount TO-252-2L