HUAYI · FETs & Power MOSFETs · MPN HYG035N02KA1C2
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| Gate Charge(Qg) | 47.5nC@2.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 95A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 57.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 510pF |
| RDS(on) | 6.5mΩ@1.8V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.082nF |
| Type | N-Channel |
N-Channel 20V 95A 57.6W Surface Mount PDFN-8(5x6)