HUAYI · FETs & Power MOSFETs · MPN HYG032N08NS1W
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| Gate Charge(Qg) | 117nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 2.75nF |
| Current - Continuous Drain(Id) | 185A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 230.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 169pF |
| RDS(on) | 3.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.5nF |
| Type | N-Channel |
N-Channel 80V 185A 230.8W Through Hole TO-247A-3L