HUAYI · FETs & Power MOSFETs · MPN HYG032N08NS1P
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| Drain to Source Voltage | 80V |
|---|---|
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 220.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 148pF |
| RDS(on) | 3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.52nF |
80V 180A 3V 220.6W 3mΩ@10V 1 N-channel TO-220FB-3L Single FETs, MOSFETs RoHS