HUAYI · FETs & Power MOSFETs · MPN HYG032N08NS1B6
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 120nC@10V |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 176pF |
| RDS(on) | 2.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.714nF |
N-Channel 80V 200A 250W Surface Mount TO-263-6L