HUAYI · FETs & Power MOSFETs · MPN HYG032N08NS1B
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 118nC@10V |
| Output Capacitance(Coss) | 2.64nF |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 220.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 148pF |
| RDS(on) | 3.4mΩ@10V |
| Input Capacitance(Ciss) | 7.52nF |
| Type | N-Channel |
80V 180A 4V 220.6W 3.4mΩ@10V N-Channel TO-263-2L Single FETs, MOSFETs RoHS